| PART |
Description |
Maker |
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRFP90N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?
|
IRF[International Rectifier]
|
| IRF610-613 IRF613 IRF611 IRF612 MPT2N18 MPT2N20 IR |
SPST, 150mA PC Mount Pushbutton N沟道功率MOSFET.5A的，15000
N-Channel Power MOSFETs, 3.5A, 150-200V N沟道功率MOSFET.5A的，15000
N-Channel Power MOSFETs/ 3.5A/ 150-200V
N-Channel Power MOSFETs 3.5A 150-200V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series
200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| 2N6790 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power
3.5A 200V 0.800 Ohm N-Channel Power
3.5A, 200V, 0.800 Ohm, N-Channel Power
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
